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| IPD350N06L G OptiMOS(R) Power-Transistor Features * For fast switching converters and sync. rectification * N-channel enhancement - logicl level * 175 C operating temperature * Avalanche rated * Pb-free lead plating, RoHS compliant Product Summary V DS R DS(on),max ID 60 35 29 V m A Type IPD350N06L G Package Marking PG-TO252-3 350N06L Maximum ratings, at T j=25 C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 C T C=100 C Pulsed drain current Avalanche energy, single pulse Reverse diode dv /dt Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 1) Value 29 20 116 80 6 20 Unit A I D,pulse E AS dv /dt V GS P tot T j, T stg T C=25 C1) I D=29 A, R GS=25 I D=29 A, V DS=48 V, di /dt =200 A/s, T j,max=175 C mJ kV/s V W C T C=25 C 68 -55 ... 175 55/175/56 See figure 3 Rev. 1.3 page 1 2008-09-01 IPD350N06L G Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area2) Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=1 mA V GS(th) I DSS V DS=V GS, I D=28 A V DS=60 V, V GS=0 V, T j=25 C V DS=60 V, V GS=0 V, T j=125 C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=10 V, I D=29 A V GS=4.5 V, I D=19 A Gate resistance Transconductance RG g fs |V DS|>2|I D|R DS(on)max, I D=29 A 60 1.2 1.6 0.01 2 1 A V 2.2 75 50 K/W Values typ. max. Unit 16 1 1 27 36 1.4 32 100 100 35 47 S nA m Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. 2) Rev. 1.3 page 2 2008-09-01 IPD350N06L G Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics3) Gate to source charge Gate charge at threshold Gate to drain charge Switching charge Gate charge total Gate plateau voltage Output charge Reverse Diode Diode continous forward current Diode pulse current Diode forward voltage Reverse recovery time Reverse recovery charge 3) Values typ. max. Unit C iss C oss C rss t d(on) tr t d(off) tf V DD=30 V, V GS=10 V, I D=29 A, R G=11 V GS=0 V, V DS=30 V, f =1 MHz - 600 150 40 6 21 29 20 800 200 60 9 32 44 30 pF ns Q gs Q g(th) Q gd Q sw Qg V plateau Q oss V DD=30 V, V GS=0 V V DD=30 V, I D=29 A, V GS=0 to 5 V - 2 1 6 8 10 4.2 6 3 1.3 9 11 13 7 nC V IS I S,pulse V SD t rr Q rr T C=25 C V GS=0 V, I F=29 A, T j=25 C V R=30 V, I F=I S, di F/dt =100 A/s - 0.98 40 36 29 116 1.3 50 45 A V ns nC See figure 16 for gate charge parameter definition Rev. 1.3 page 3 2008-09-01 IPD350N06L G 1 Power dissipation P tot=f(T C) 2 Drain current I D=f(T C); V GS10 V 80 70 30 25 60 20 50 P tot [W] 40 30 I D [A] 0 50 100 150 200 15 10 20 5 10 0 0 0 50 100 150 200 T C [C] T C [C] 3 Safe operating area I D=f(V DS); T C=25 C; D =0 parameter: t p 4 Max. transient thermal impedance Z thJC=f(t p) parameter: D =t p/T 101 limited by on-state resistance 1 s 10 s 100 s 0.5 10 2 100 101 DC 1 ms Z thJC [K/W] 0.2 I D [A] 0.1 0.05 10 ms 10-1 10 0 0.02 0.01 single pulse 10-1 10 -1 10-2 10 0 10 1 10 2 10-6 10-5 10-4 10-3 10-2 10-1 100 V DS [V] t p [s] Rev. 1.3 page 4 2008-09-01 IPD350N06L G 5 Typ. output characteristics I D=f(V DS); T j=25 C parameter: V GS 60 10 V 5.5 V 5V 6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 C parameter: V GS 80 3V 3.5 V 4V 50 60 40 4.5 V R DS(on) [m] 4.5 V I D [A] 30 4V 40 5V 5.5 V 10 V 20 20 3.5 V 10 3V 0 0 1 2 3 0 0 10 20 30 40 V DS [V] I D [A] 7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 60 8 Typ. forward transconductance g fs=f(I D); T j=25 C 50 50 40 40 30 30 g fs [S] 20 10 175 C 25 C I D [A] 20 10 0 0 1 2 3 4 5 0 0 10 20 30 40 50 60 V GS [V] I D [A] Rev. 1.3 page 5 2008-09-01 IPD350N06L G 9 Drain-source on-state resistance R DS(on)=f(T j); I D=29 A; V GS=10 V 10 Typ. gate threshold voltage V GS(th)=f(T j); V GS=V DS parameter: I D 100 2.5 80 2 280 A R DS(on) [m] 60 V GS(th) [V] 1.5 28 A 98 % 40 typ 1 20 0.5 0 -60 -20 20 60 100 140 180 0 -60 -20 20 60 100 140 180 T j [C] T j [C] 11 Typ. capacitances C =f(V DS); V GS=0 V; f =1 MHz 12 Forward characteristics of reverse diode I F=f(V SD) parameter: T j 102 175 C 98% 103 25 C Ciss C [pF] I F [A] 101 175 C 25 C 98% Coss 102 Crss 100 101 0 10 20 30 40 50 10-1 0 1 2 3 V DS [V] V SD [V] Rev. 1.3 page 6 2008-09-01 IPD350N06L G 13 Avalanche characteristics I AS=f(t AV); R GS=25 parameter: T j(start) 102 14 Typ. gate charge V GS=f(Q gate); I D=29 A pulsed parameter: V DD 12 10 25 C 30 V 12V 48 V 8 100 C 101 150 C V GS [V] 102 t AV [s] 103 I AV [A] 6 4 2 100 100 101 0 0 5 10 15 20 Q gate [nC] 15 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=1 mA 16 Gate charge waveforms 75 V GS Qg 70 V BR(DSS) [V] 65 60 V g s(th) 55 Q g (th) Q gs -60 -20 20 60 100 140 180 Q sw Q gate 50 Q gd T j [C] Rev. 1.3 page 7 2008-09-01 IPD350N06L G PG-TO252-3: Outline Rev. 1.3 page 8 2008-09-01 IPD350N06L G Rev. 1.3 page 9 2008-09-01 |
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